Lead Principal Engineer GaN IC Development (f/m/div) at Infineon Technologies AG
| Position | Lead Principal Engineer GaN IC Development (f/m/div) |
| Posted | 2025 October 08 |
| Expired | 2025 November 07 |
| Company | Infineon Technologies AG |
| Location | Villach | AT |
| Job Type | Full Time |
Job Description:
Latest job information from Infineon Technologies AG for the position of Lead Principal Engineer GaN IC Development (f/m/div). If the Lead Principal Engineer GaN IC Development (f/m/div) vacancy in Villach matches your qualifications, please submit your latest application or CV directly through the updated Jobkos job portal.
Please note that applying for a job may not always be easy, as new candidates must meet certain qualifications and requirements set by the company. We hope the career opportunity at Infineon Technologies AG for the position of Lead Principal Engineer GaN IC Development (f/m/div) below matches your qualifications.
...bandgap semiconductor technologies is a plus ~ Certification in project management is a plus ~ Knowledge of low/medium voltage power technologies and DC/DC power stages ~ Excellent communication and coordination skills in a multi-cultural, multi-site and...Job Info:
- Company: Infineon Technologies AG
- Position: Lead Principal Engineer GaN IC Development (f/m/div)
- Work Location: Villach
- Country: AT
How to Submit an Application:
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